中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Manufacture of semiconductor laser

文献类型:专利

作者MATSUMOTO SHOHEI
发表日期1986-05-06
专利号JP1986088585A
著作权人NEC CORP
国家日本
文献子类发明申请
其他题名Manufacture of semiconductor laser
英文摘要PURPOSE:To improve the controllability of the diffusion depth of a diffusion region and the reproducibility of low threshold currents by growing a clad layer, an active layer,m a clad layer and a cap layer on a substrate in an epitaxial manner, forming a plurality of parallel V grooves to the cap layer while using an insulating film shaped onto the cap layer as a mask and diffusing an impurity in low concentration from the V groove. CONSTITUTION:An N type AlxGa1-xAs clad layer 2, an N type GaAs active layer 3, an N type AlxGa1-xAs clad layer 4 and an N type GaAs cap layer 5 are grown on an N type GaAs substrate 1 in an epitaxial manner in succes sion, and an insulating film 6 consisting of SiN, SiO2 or the like is formed. Parallel striped windows B, C, D in the direction having different width are shaped to the film 6, and V grooves having different depth are formed while employing the film 6 as a mask. A low-concentration diffusion region 7 is shaped to the active layer 3. Diffusion width is made sure, the film 6 and the layer 5 are removed, an insulating film 8 is formed onto the layer 4, a striped window C' is shaped while conforming to the window C, an impurity high-concentration diffusion region 9 is formed, and an electrode is shaped, thus constituting a DDS laser.
公开日期1986-05-06
申请日期1984-10-08
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/78041]  
专题半导体激光器专利数据库
作者单位NEC CORP
推荐引用方式
GB/T 7714
MATSUMOTO SHOHEI. Manufacture of semiconductor laser. JP1986088585A. 1986-05-06.

入库方式: OAI收割

来源:西安光学精密机械研究所

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