Manufacture of semiconductor laser
文献类型：专利
| 作者 | MATSUMOTO SHOHEI |
| 发表日期 | 1986-05-06 |
| 专利号 | JP1986088585A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the controllability of the diffusion depth of a diffusion region and the reproducibility of low threshold currents by growing a clad layer, an active layer,m a clad layer and a cap layer on a substrate in an epitaxial manner, forming a plurality of parallel V grooves to the cap layer while using an insulating film shaped onto the cap layer as a mask and diffusing an impurity in low concentration from the V groove. CONSTITUTION:An N type AlxGa1-xAs clad layer 2, an N type GaAs active layer 3, an N type AlxGa1-xAs clad layer 4 and an N type GaAs cap layer 5 are grown on an N type GaAs substrate 1 in an epitaxial manner in succes sion, and an insulating film 6 consisting of SiN, SiO2 or the like is formed. Parallel striped windows B, C, D in the direction having different width are shaped to the film 6, and V grooves having different depth are formed while employing the film 6 as a mask. A low-concentration diffusion region 7 is shaped to the active layer 3. Diffusion width is made sure, the film 6 and the layer 5 are removed, an insulating film 8 is formed onto the layer 4, a striped window C' is shaped while conforming to the window C, an impurity high-concentration diffusion region 9 is formed, and an electrode is shaped, thus constituting a DDS laser. |
| 公开日期 | 1986-05-06 |
| 申请日期 | 1984-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78041]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHOHEI. Manufacture of semiconductor laser. JP1986088585A. 1986-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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