半導体レ-ザの製造方法
文献类型：专利
| 作者 | 山口 隆夫 |
| 发表日期 | 1996-02-07 |
| 专利号 | JP1996012944B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To form the sectional shape of an active layer substantially in a square shape by sequentially forming a groove, the first clad layer and an active layer on one main surface of a semiconductor substrate, melting back the active layer, and providing the second clad layer on the exposed surface. CONSTITUTION:A groove 31 having width B=0mum, depth D=0mum is formed on one main surface of an N type GaAs substrate 30. The first clad layer 32 having the same surface shape as the main surface of the substrate 30, an active layer 33 and the first GaAs layer 34 are sequentially laminated on the substrate 30. The flat surface second GaAs layer 35 is formed on the layer 34. Parts of the first, second GaAs layers 34, 35 and active layer 33 are removed by melting back until arriving at the flat surface of the layer 32 from the surface of the layer 35. Then, the second clad layer 35 and the cap layer 36 are sequentially laminated on the surfaces of the first clad layer 32 and the layer 33 exposed in the previous step. Thus, the sectional shape of the layer 33 is formed in a square shape in a semiconductor laser is manufactured. |
| 公开日期 | 1996-02-07 |
| 申请日期 | 1983-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78063]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 山口 隆夫. 半導体レ-ザの製造方法. JP1996012944B2. 1996-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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