半導体レーザ
文献类型：专利
| 作者 | 浜田 弘喜 |
| 发表日期 | 1997-10-17 |
| 专利号 | JP2708784B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To make it possible to perform a stable operation for a long period at high-output operation without non-luminescent layer being formed at the time of forming a dielectric multi-layer film by disposing a buffer layer between the end surface of a laser element and a dielectric multi-layer film. CONSTITUTION:In an InGaAlP semiconductor laser element 1, an n-InGaAlP clad layer 1b, an InGaP active layer 1c, an InGaAlP clad layer 1d, and a p- GaAs cap layer 1e are laminated in this order from top of a GaAs substrate 1a. On the end surface of the reflection side of the semiconductor laser element 1 is coated an a-Si:H buffer layer 5. ON the end surface of the incidence side of the InGaAlP semiconductor laser element 1 is adhered the a-Si:H buffer layer 5. As a result, at the time of forming an Al2O3 film 2 or an a-Si:H film 3, the formation of non-luminescent layers on the end surface is reduced, and laser beams of high output are stably output for a long period of time. |
| 公开日期 | 1998-02-04 |
| 申请日期 | 1988-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78069]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 浜田 弘喜. 半導体レーザ. JP2708784B2. 1997-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。