Optical semiconductor device
文献类型：专利
| 作者 | AOYAGI, TOSHITAKA; MIYAZAKI, YASUNORI |
| 发表日期 | 1998-08-04 |
| 专利号 | US5790737 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | A semiconductor laser chip according to the present invention comprises: a p-type InP substrate; an InGaAsP active layer (optical waveguide) formed on said substrate; a p-n-p InP block layer formed on said substrate; a contact layer formed thereupon; an insulating film formed on said contact layer; a front surface electrode formed on said insulating film; a pair of alignment marks formed at the same time of the optical waveguide; and a back surface electrode formed on said substrate. The alignment marks are formed from the same material, i.e., the same crystal as said optical waveguide. Accordingly, it is possible to improve precision of the relative position between said optical waveguide and said alignment marks. |
| 公开日期 | 1998-08-04 |
| 申请日期 | 1996-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78081]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | AOYAGI, TOSHITAKA,MIYAZAKI, YASUNORI. Optical semiconductor device. US5790737. 1998-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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