Semiconductor laser
文献类型：专利
| 作者 | TOYODA YUKIO |
| 发表日期 | 1988-01-28 |
| 专利号 | JP1988020889A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prepare a stable longitudinal single mode laser having high singleness stably by using a plurality of waveguides having different width and directly joining a plurality of resonators by the same composition material. CONSTITUTION:A waveguide 1 in width W1 and a waveguide 2 in width W2, width of which each differs, are used, and a plurality of resonators are joined directly by a bonding section 3 consisting of the same composition material. That is, a plurality of parallel buried active layers can easily be bonded directly by the same composition material as the active layers at an arbitrary position, thus resulting in positive bonding and the high controllability of a bonding ratio. Accordingly, a stable perfect single mode is acquired. When the reflectivity of the end surface of one resonator is elevated up to a value close to 1 for lowering a threshold and increasing an output, a means for further improving performance is obtained. |
| 公开日期 | 1988-01-28 |
| 申请日期 | 1986-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78095]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TOYODA YUKIO. Semiconductor laser. JP1988020889A. 1988-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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