Semiconductor laser device
文献类型：专利
| 作者 | NIINA TATSUHIKO |
| 发表日期 | 1983-05-10 |
| 专利号 | JP1983077274A |
| 著作权人 | SANYO DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the generation of internal stress and the deterioration in crystallizability as well as to obtain the laser device of an excellent heat radiating effect by a method wherein ZnSe containing no additive is used in the insulating film located above the grown layer having a double hetero-junction formed thereon using GaAs- GaAlAs material. CONSTITUTION:A substrate 21, on which a cap layer is going to be formed, is adhered to a holder 10 using In 20, and Zn and Se are placed in a crucible 17 respectively. The temperature of the substrate is set at 350-400 deg.C, a Zn cell at approximately 290 deg.C and an Se cell at approximately 190 deg.C, a non-additive ZnSe layer 22 is formed on an n- GaAs cap layer 5 using a molecular epitaxial method as prescribed and by performing an opening or a shutting operation on a shutter 14, an aperture is provided on a laser 22 using the mixed solution of bromine and methanol, and an ohmic upper electrode is attached as before. The In 20 is used as the lower electrode 8. Layers 2-5 active layers p-GaAlAs and GaAlAs, and cap layers n-GaAlAs and n-GaAs, each of which are formed by successive lamination. The above layers have the grating constant and the coefficient of thermal expansion which are extremely approximate to those of the GaAs, both of them have almost the same specific heat, and there generates no deterioration in crystallization due to self-diffusion because they contain no impurities, thereby enabling to obtain an excellent laser device. |
| 公开日期 | 1983-05-10 |
| 申请日期 | 1981-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78103]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO DENKI KK |
| 推荐引用方式 GB/T 7714 | NIINA TATSUHIKO. Semiconductor laser device. JP1983077274A. 1983-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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