Semiconductor laser device
文献类型：专利
| 作者 | ONODERA NORIAKI |
| 发表日期 | 1987-07-11 |
| 专利号 | JP1987156891A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce a leakage current and minimize heating by a method wherein a substrate or a layer which has a protrusion with a predetermined cross section on its surface is employed and the surface is covered by a current blocking layer except the apex part of the protrusion and a current path is specified to constrict the current from the substrate. CONSTITUTION:A protrusion 11a which has a triangular cross section is formed on the top surface of an N-type GaAs substrate 11 and a P-type AlGaAs or GaAs current blocking layer 12 is made to grow on the top surface of the substrate 11 while the predetermined apex part of the protrusion 11a is projected out of the surface of the layer 12. With this structure, the current path for the substrate 11 is limited to the apex part of the protrusion 11a so that the current constriction of the substrate 11 side can be performed effectively. A diffused region 17, facing the apex part of the protrusion 11a, is formed in a cladding layer 15 and this region also performs current constriction so that double current constriction can be performed and the more specified path of an exciting current can be provided. |
| 公开日期 | 1987-07-11 |
| 申请日期 | 1985-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78111]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI. Semiconductor laser device. JP1987156891A. 1987-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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