Semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA, SHIGEO; MATSUDA, HIROSHI; KOBAYASHI, UICHIRO; KOBAYASHI, MASAYOSHI; NAKASHIMA, HISAO |
| 发表日期 | 1982-01-27 |
| 专利号 | EP0044571A2 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | This invention consists in improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An active layer (3) and an optical guide layer (2) are sandwiched between two cladding layers (1, 4), to form an optical confinement region. The width of the semiconductor material assembly varies in the stacking direction of the layers (1 . 4), and the narrowest part (14) thereof is located on the side opposite to the optical guide layer (2) with reference to the position of the active layer (3). The side surface of said semiconductor material assembly parallel to the travelling direction of laser radiation is buried by a burying layer (6). |
| 公开日期 | 1982-01-27 |
| 申请日期 | 1981-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | YAMASHITA, SHIGEO,MATSUDA, HIROSHI,KOBAYASHI, UICHIRO,et al. Semiconductor laser device. EP0044571A2. 1982-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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