Liquid phase epitaxial growth
文献类型：专利
| 作者 | YAMAGUCHI AKIO |
| 发表日期 | 1985-02-08 |
| 专利号 | JP1985025228A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To enable to grow an epitaxial crystal having no misfit displacement and having a broad area with favorable reproducibility by a method wherein a groove type recess part is provided previously at the side inner than the side edge part of the surface region of a substrate to come in contact with a solution for growth. CONSTITUTION:A squarely loop-shape groove type recess part 6 of about 500mum width, about 50mum depth and 16X16mm. outside size, for example, is formed on the surface of a substrate 1 according to photolithography and chemical etching. It is necessary to form outside size of the groove type recess part 6 a little smaller than a contact area with a solution for performance of epitaxial growth of the substrate An N type InP buffer layer is grown at about 5mum thickness, an N type InGaAsP layer of photoluminescence wavelength (lambdapL)=34mum is at about 3mum thickness (lattice mismatch DELTAa/aapprox.=0.1%), and moreover an N type InP layer is grown at about 3.5mum thickness in order on the substrate 1 mentioned above, for example. Accordingly, misfit dislocation can be observed only at a narrow region up to the groove type recess part 6 from the peripheral part of the substrate 1, and misfit displacement can be observed scarcely at the growth layer 5 of a region surrounded with the groove type recess part 6. |
| 公开日期 | 1985-02-08 |
| 申请日期 | 1983-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78118]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIO. Liquid phase epitaxial growth. JP1985025228A. 1985-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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