Semiconductor laser element
文献类型：专利
| 作者 | KAKIMOTO SHIYOUICHI; HIRONAKA MISAO; MIHASHI YUTAKA; TAKAMIYA SABUROU |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003183A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To concentrate currents flowing through a p type AlGaAs active layer only to a striped n type AlGaAs clad layer, and to obtain a high optical output by previously surrounding both sides of the clad layer by AlGaAs clad layers, which have the same composition as the clad layer but have an i type, when the n type clad layer is formed on an n type GaAs substrate and shaping the active layer on these clad layers. CONSTITUTION:A striped n type Al1-yGayAs clad layer 2b is formed on an n type GaAs substrate 1, and both sides of the clad layer 2b are surrounded by i type Al1-yGayAs clad layers 2a. A p type Al1-xGaxAs active layer 3 and a p type Al1-yGayAs clad layer 4 are laminated on the whole surfaces of the clad layers and grown in an epitaxial manner, and the upper section of the clad layer 4 is coated with a p type GaAs contact layer 5. Accordingly, currents flowing through the substrate 1 from the active layer 3 are concentrated to the striped n type clad layer 2b, and a kink phenomenon and the instability of a lateral mode are eliminated. |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78121]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHIYOUICHI,HIRONAKA MISAO,MIHASHI YUTAKA,et al. Semiconductor laser element. JP1985003183A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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