光半導体装置
文献类型：专利
| 作者 | 茂木 直人; 平原 奎治郎 |
| 发表日期 | 1998-07-17 |
| 专利号 | JP2804093B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体装置 |
| 英文摘要 | PURPOSE:To obtain a high grade crystal structure which is low in crystal defects by forming a II-VI compound semiconductor layer on a III-V compound semiconductor having the composition ratio of Al that is more than the prescribed rate; besides, forming pn junction at the II-VI compound semiconductor layer. CONSTITUTION:First of all, a II-VI compound semiconductor layer containing n-type (or p-type) impurities performs an epitaxial growth with an MOCVD process and the like, for example, at a temperature higher than 620 deg.C on a III-V compound semiconductor having the composition ratio of Al that is 0.15 or more. Subsequently, p-type (or n-type) impurities are either diffused or ion-implanted on the II-VI compound semiconductor layer containing the n-type (or p-type) impurities or the II-VI compound semiconductor layer containing the p-type (or n-type) impurities performs the epitaxial growth with the MOCVD process and the like. Then, the II-VI compound semiconductor layer having pn junction is formed at the III-V compound semiconductor with either methods as mentioned above, and then a photosemiconductor device is manufactured. If the composition ratio of Al is 0.15 or less, a II-VI compound semiconductor which is superior in a crystalline character is not formed on the occasion of making the II-VI compound semiconductor grow on the III-V compound semiconductor containing Al. |
| 公开日期 | 1998-09-24 |
| 申请日期 | 1989-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78152]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 茂木 直人,平原 奎治郎. 光半導体装置. JP2804093B2. 1998-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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