Semiconductor laser
文献类型：专利
| 作者 | UKOU KATSUYUKI; SAKAI KAZUO; AKIBA SHIGEYUKI; MATSUSHIMA HIROICHI; KUSHIRO YUKITOSHI; NODA YUKIO |
| 发表日期 | 1983-07-07 |
| 专利号 | JP1983114476A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain high coupling efficiency of a semiconductor laser by forming a tapered region by varying the width without varying the thickness of an active layer. CONSTITUTION:An n type Ga1-uInuAsvP1-v waveguide 12, non-added GaxIn1-x AsyP1-y active layer 13, a p type InP clad layer 14 and a buried layer 15, and a p type GaInAsP cap layer 16 are superposed on an n type InP substrate 11, x>u, y>v are established, the other surface is formed by the coupling side, and electrodes 16, 17 are attached. A region A is formed of the active layer 13 of the prescribed width and the waveguide 12 with intrinsic light distribution determined by the refractive index distribution, but in case of propagation, since the active layer width is uniformly reduced in the tapered region B, the light distribution is not almost scattered, but is propagated in the region C, and the regions A and C are coupled in high efficiency. On the contrary, in case of reverse propagation, similar operation occurs. When the width of the waveguide 12 is approx. 2mum, the length of the region B is approx. 50mum and the end is less than 0.5mum the advantages are remarkable. This configuration can be formed with good reproducibility in the planar process steps, and a resonator can be made available by forming rugged surface 19 on the region A or C. |
| 公开日期 | 1983-07-07 |
| 申请日期 | 1981-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78154]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | UKOU KATSUYUKI,SAKAI KAZUO,AKIBA SHIGEYUKI,et al. Semiconductor laser. JP1983114476A. 1983-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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