Semiconductor laser device
文献类型：专利
| 作者 | OGITA SHOICHI; KOTAKI YUJI |
| 发表日期 | 1989-09-25 |
| 专利号 | JP1989239892A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain stabilized single wavelength oscillation characterized by the narrow width of a spectral line even at the time of high output power, by providing phase shifting points where the phases of a diffraction grating are shifted at three or more different odd-numbered places on the direction of a resonator comprising the diffraction grating of a distributed feedback type semiconductor laser. CONSTITUTION:Irregularities having a periodicity in the direction of a resonator is provided on the surface of an active layer 23 or a waveguide layer 22 that is in contact with the active layer 23. Thus, a diffraction grating 32 is formed in a distributed feedback type semiconductor laser device. Phase shifting points (32a-32c) where the phase of the diffraction grating is shifted are provided at three different odd- numbered places on the direction of the resonator of the diffraction grating 32. For example, the irregularities are formed periodically at a period of 2,400Angstrom at the boundary between a substrate 20 and the waveguide layer 22 in a DFB laser having a flat surface embedded structure as shown in the Figure, and the diffraction grating 32 is formed. When the length of the waveguide layer 22 in the direction Z, i.e., the length of the resonator, is 1,200mum, the phase shifting points 32a-32c are provided at the positions separated by 150mum, 600mum and 1,050mum from a reflection preventing film 30 at the diffraction grating 32. The phase shifting amount at each point is 0.8pi. |
| 公开日期 | 1989-09-25 |
| 申请日期 | 1988-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI,KOTAKI YUJI. Semiconductor laser device. JP1989239892A. 1989-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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