Manufacture of buried semiconductor laser
文献类型：专利
| 作者 | KONDO YASUHIRO; ITAYA YOSHIO; OISHI MAMORU |
| 发表日期 | 1988-06-02 |
| 专利号 | JP1988129683A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried semiconductor laser |
| 英文摘要 | PURPOSE:To grow an epitaxial film which has a uniform composition and a uniform layer thickness in a great area and to improve the mass productivity of a laser by using only an organic metal vapor phase epitaxial through a required process. CONSTITUTION:A first conductive type buffer layer 1 is formed on a first conductivity type compound semiconductor substrate, then an active layer 2, a second conductivity type clad layer 3 and an etching stopper layer 8 are deposited, and a mesa structure is formed by selectively etching to the buffer layer 1 or the surface of the substrate. Then, a second conductivity type current block layer 4 and a first conductivity type current confinement layer 5 are deposited by covering the mesa structure by the organic metal vapor phase epitaxial on the substrate on which the mesa structure is formed. The top of the mesa structure is selectively removed by etching, the stopper layer 8 is removed further and electrodes 10, 11 are provided by depositing the second conductive type buried layer 6 and a cap later 9. |
| 公开日期 | 1988-06-02 |
| 申请日期 | 1986-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78173]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KONDO YASUHIRO,ITAYA YOSHIO,OISHI MAMORU. Manufacture of buried semiconductor laser. JP1988129683A. 1988-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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