中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light amplifier

文献类型:专利

作者MAGARI KATSUAKI; NOGUCHI ETSUO; OKAMOTO KATSUNARI; MIKAMI OSAMU; YASAKA HIROSHI
发表日期1991-04-02
专利号JP1991077388A
著作权人NIPPON TELEGR & TELEPH CORP
国家日本
文献子类发明申请
其他题名Semiconductor light amplifier
英文摘要PURPOSE:To prevent the saturated output light from weakening by inclining at least one of waveguide end faces by a smaller angle than the critical angle to a face perpendicular to the direction of travel of a light passing through the end face. CONSTITUTION:At least one of waveguide end faces S11 and S12, S21 and S22,. and SN1 and Sn2 is inclined by a smaller angle than the critical angle thetac to a face perpendicular to the direction of travel of a light passing through said end face. When the value of angle thetaij is set properly, an amplified light emitted from a second semiconductor laminate end face can be obtained as a light having a ration of the gain of a horizontal polarization component to that of a vertical polarization component, which is approximately the same as the ratio of the gain of the horizontal polarization component to that of the vertical polarization component of a light entered to a first semiconductor laminate end face, and therefore having gain fidelity of the incident light. The gain of the saturated output light can be increased by thinning the second semiconductor layer.
公开日期1991-04-02
申请日期1989-08-18
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/78177]  
专题半导体激光器专利数据库
作者单位NIPPON TELEGR & TELEPH CORP
推荐引用方式
GB/T 7714
MAGARI KATSUAKI,NOGUCHI ETSUO,OKAMOTO KATSUNARI,et al. Semiconductor light amplifier. JP1991077388A. 1991-04-02.

入库方式: OAI收割

来源:西安光学精密机械研究所

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