Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | OKAJIMA MASASUE; MOGI NAOTO; MUTOU YUUHEI |
| 发表日期 | 1984-07-25 |
| 专利号 | JP1984129473A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To bring an oscillating wavelength close to the short wavelength side by making Al to be contained in a first clad layer and an optical waveguide layer when a laser device is manufactured in such a manner that the first clad layer, an active layer and the optical waveguide layer are laminated on a substrate consisting of an insulator or a III-V family semiconductor, the active layer and the optical waveguide layer are formed to a mesa stripe shape and a second clad layer is formed on the exposed first clad layer and the optical waveguide layer. CONSTITUTION:An N type Al0.45Ga0.55 first clad layer 2, an un-doped Al0.15 Ga0.35As active layer 3 and a P type Al0.35Ga0.65As optical waveguide layer 10 are laminated on an N type GaAs substrate 1 and liquid phase-grown. The layers 10 and 3 are etched selectively up to depth reaching the layer 2 to form a mesa stripe section, and a P type Al0.45Ga0.55As second clad layer 4 and a P type GaAs ohmic contact layer 5 are grown on the whole surface through an organic metal vapor phase growth method, etc. Accordingly, Al is contained in the layers 2 and 10 as a constitutional element, and an oscillating wavelength is controlled to the short wavelength side. |
| 公开日期 | 1984-07-25 |
| 申请日期 | 1983-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78182]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | OKAJIMA MASASUE,MOGI NAOTO,MUTOU YUUHEI. Semiconductor laser device and manufacture thereof. JP1984129473A. 1984-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。