Semiconductor light emitting device
文献类型：专利
| 作者 | MIZUOCHI HITOSHI; YAGI TETSUYA |
| 发表日期 | 1989-09-05 |
| 专利号 | JP1989222486A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To inject a current efficiently into an active region so as to improve a device in properties such as an optical output, a response speed, and others by a method wherein a region of a current blocking layer adjacent to a clad layer is composed of a semiconductor layer whose forbidden band width is equal to that of the clad layer. CONSTITUTION:An n-type InP current blocking layer 5 which has the same forbidden band width as that of a clad layer 4 is provided on a junction part of the blocking layer 5 with the p-type InP upper clad layer 4. Therefore, the width difference of the forbidden band at the junction part is eliminated, so that even if almost the same current as a conventional device is made to flow through the p-type InP upper clad layer 4 which corresponds to a gate section of a parasitic thyristor, the thyristor section becomes hard to turn on by the extent induced by the elimination of the width difference. By these processes, a current is efficiently injected into an active layer and the intensity distribution of an emitted optical output is made almost equal to the diameter of a stripe window 11, so that the coupling between the emitted light rays and an optical fiber is improved in efficiency. And, current is uniformly converted into light and a device is also improved in a response speed property. |
| 公开日期 | 1989-09-05 |
| 申请日期 | 1988-02-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78187]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI,YAGI TETSUYA. Semiconductor light emitting device. JP1989222486A. 1989-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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