Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; KAJIMURA TAKASHI |
| 发表日期 | 1992-05-18 |
| 专利号 | JP1992144181A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain an ultrahigh output semiconductor laser controlled in a lateral mode oscillation by providing a transparent waveguide between a light gain region and a reflecting surface for feeding back a light, and specifying an optical feedback amount to the region by the waveguide. CONSTITUTION:A pattern is chemically etched by using photolithography technique. Since a window region 8 is etched in a reverse mesa state, the sections of a block layer 6, a clad layer 5, and an active layer 4 are exposed in a boundary between the region 8 and the layer 6. The region 8 is etched at the right and left sides by the chemical etching so as to form a transparent waveguide 11, and a position of a self-alignment type waveguide 12 is etched at a region except it. Further, in a region except the window region, Zn is diffused with an SiO2 film as a mask so as to be superposed on the self-alignment type waveguide 12 to form a Zn-diffused region 13. |
| 公开日期 | 1992-05-18 |
| 申请日期 | 1990-10-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78189]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,KAJIMURA TAKASHI. Semiconductor laser and manufacture thereof. JP1992144181A. 1992-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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