Manufacture of semiconductor device
文献类型：专利
| 作者 | SHIGE NORIYUKI; ONDA HIDEYA |
| 发表日期 | 1983-11-17 |
| 专利号 | JP1983197786A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To control the diffusion depth with high precision by a method wherein a diffusion control layer with large diffusion constant is preliminarily provided on the part with specified depth in the specified region of semiconductor substrate. CONSTITUTION:An active GaAs layer 3, cap layer 5, GaAlAs n and p clad layers 2, 4 and diffusion control layer 9 are laminated in the specified order on n-GaAs substrate 1 with the thickness of layers 2, 3, 4, 9 and 5 respectively 5mum, 0.1mum. 0.5mum, 5mum and 0.5mum also with the mixed crystal ratio of Al of layer 9 i.e. 0.6 exceeding that of layers 4, 2 i.e. 0.35-0.4 also setting up large number of Zn diffusion constant. When a mask 10 is covered to diffuse Zn and select process time t, the bottom surface of Zn diffusion layer 8 is within p layer 4 with low diffusion speed due to small mixed crystal ratio set up and less dispersion of the depth of layer 8. Through these procedures, the distance d between diffusion front and active layer 3 may be made almost constant promoting current narrowing effet, simplifying lateral mode and stabilizing longitudinal mode of laser beams. |
| 公开日期 | 1983-11-17 |
| 申请日期 | 1982-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78191]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI,ONDA HIDEYA. Manufacture of semiconductor device. JP1983197786A. 1983-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。