Semiconductor laser
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1987-06-25 |
| 专利号 | JP1987142387A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a leaking current component without decreasing oscillating efficiency in a lateral mode, by providing a light absorbing layer comprising a narrow first-conductivity type compound semiconductor as an embedded layer on the side close to an active layer, and providing a high-resistance current blocking layer comprising a compound semiconductor as a layer on the remote side. CONSTITUTION:A semiconductor laser comprises a double heterojunction structure and embedded layers 20. The heterojunction structure is composed of the following layers: an n-type Ga0.7Al0.3As clad layer 12 formed on an n-type GaAs substrate 11; a non-doped Ga0.95Al0.05As active layer 13 with a thickness of 0.1mum; a p-type Ga0.7Al0.3 clad layer 14; and a p-type GaAs cap layer 15. The embedded layers 20 are composed of a groove part 17, which is opened to the intermediate part of the p-type clad layer 14 other than a stripe part; an n-type GaAs light absorbing layer 18, which is provided in the grooves 17 and located on the side of the active layer 13; and a high-resistance Ga0.7Al0.3As current blocking layer 19, which is located on the surface side. Thus a leaking current flowing a part other than the active layer 13, is reduced by the high-resistance current blocking layer 19 to a large extent, and the lateral mode oscillation can be stabilized by the light absorbing layer 18. |
| 公开日期 | 1987-06-25 |
| 申请日期 | 1985-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78197]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Semiconductor laser. JP1987142387A. 1987-06-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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