Distributed reflection semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO HIROKAZU; SUEMATSU ANSEI |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169090A |
| 著作权人 | 株式会社フジクラ |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an optical absorption loss and lessen a leakage current passing through an external waveguide region by forming an external waveguide layer after causing it to be a non-doped semiconductor layer and then forming a diffusion layer for current confinement coming from an upper plane electrode to a protecting layer. CONSTITUTION:An active waveguide layer 3 and a protecting layer 4 which form active regions on a substrate 1 perform an epitaxial growth in sequence and both sides of them are reduced by selective etching and an upper plane of the substrate 1 is exposed. Distributed Bragg reflectors 11 are formed on the upper plane of the substrate 1 by etching and allow an external waveguide 16, a clad layer 17, and a cap layer 7 to perform the epitaxial growth in sequence. A Zn diffusion region 18 is formed by Zn diffusion and then the protecting layer 7 and electrodes 10a and 10b are formed. In this way, optical absorption is lessened by causing the external waveguide layer 16 to be a non- doped layer. Then the formation of the diffusion region 18 for current confinement permits electric currents to be concentrated on the active waveguide layer 3 and prevents a leakage current passing through the external waveguide region. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社フジクラ |
| 推荐引用方式 GB/T 7714 | HASHIMOTO HIROKAZU,SUEMATSU ANSEI. Distributed reflection semiconductor laser. JP1988169090A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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