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文献类型：专利
| 作者 | FURUYAMA HIDETO; UEMATSU YUTAKA |
| 发表日期 | 1989-12-13 |
| 专利号 | JP1989058676B2 |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent the occurrence of defects and strain at the time of fine machining and to improve the characteristics of the element, by forming a fine pattern comprising a crystal which is readily meltbacked on a semiconductor substrate. CONSTITUTION:The fine pattern 11 comprising a crystal layer which is readily meltbacked is formed on the substrate Then, a buffer layer 2, an active layer 3, and a clad layer 4 are sequentially grown and formed on the substrate 1 as a first semiconductor crystal layer. Thereafter the pattern 11 is removed by the meltback. Then an embedded clad layer 5 and an ohmic contact layer 12 are grown and formed as a second semiconductor crystal layer. In this method of the formation, etching is not required to perform on the first and second semiconductor crystal layers, and the occurrence of the defects and strain in said crystal layers can be prevented. Therefore the characteristics of the element can be improved. |
| 公开日期 | 1989-12-13 |
| 申请日期 | 1981-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78215]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,UEMATSU YUTAKA. -. JP1989058676B2. 1989-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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