Semiconductor laser device
文献类型：专利
| 作者 | KUME MASAHIRO; WADA MASARU |
| 发表日期 | 1989-09-05 |
| 专利号 | JP1989222492A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the manufacture of a device at a low cost by a method wherein a silicon film whose thickness is 7/100-8/100 of a wavelength is coated on an aluminum film coated on an end face whose thickness corresponds to one-fourth of a wavelength, which are sealed with a transparent plastic resin of a refractive index of 3-6. CONSTITUTION:A semiconductor laser element 1 and a photodiode 3 are buried in a transparent plastic resin 2 in place of a cap provided with a window glass. In this process, an aluminum film 7 1/4 as thick as a wavelength and a silicon film 8 7/100-8/100 as thick as a wavelength are laminated on both the end faces of the passivation film of the laser element 1, whereby the refrectivity of both the end faces decreases to about 32% when the element 1 is buried in the resin of a refractive index of 3-6. Therefore, a laser oscillating threshold current and a differential quantum efficiency of the element 1 are made equal to those of a conventional element, so that the element 1 does not vary in characteristic. By these processes, a package can be decreased in cost, a divergence angle can be controlled, and the element is also excellent in heat dissipation and hermetic sealing. |
| 公开日期 | 1989-09-05 |
| 申请日期 | 1988-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78219]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | KUME MASAHIRO,WADA MASARU. Semiconductor laser device. JP1989222492A. 1989-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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