Semiconductor laser
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI; MORI YOSHIFUMI |
| 发表日期 | 1991-10-24 |
| 专利号 | JP1991238887A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate wiring for connection with another element, and others, in formation of OEIC(optoelectronic IC) and thereby to enable application of the title laser to OEIC and the like and diversification thereof by leading out both of P and N electrodes onto the same surface side. CONSTITUTION:Both of N-side and P-side electrodes are led out of the surface side, i.e. the same surface side, being in contact with N-type and P type clad layers 3 and 5 holding each active layer 4 in a stripe-shaped epitaxial growth layer 20 on a mesa projection 2 therebetween and with an N-type clad layer 6 or the P-type clad layer 5 or an impurity introduction region 11 interposed, respectively. Even in the case when a monolithic type IC or a hybrid-type IC having a semiconductor laser and other circuit elements provided on a common semiconductor base is constructed, for instance, wiring for connection of this semiconductor laser with the other circuit elements is facilitated and, consequently, design for OEIC is facilitated. |
| 公开日期 | 1991-10-24 |
| 申请日期 | 1990-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78227]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI,MORI YOSHIFUMI. Semiconductor laser. JP1991238887A. 1991-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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