Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; KAZUMURA MASARU |
| 发表日期 | 1985-12-20 |
| 专利号 | JP1985258991A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To carry out current stricture and light confinement with good efficiency by a method wherein a multilayer film including a double hetero structure is formed on a substrate having a forward mesa stepwise difference in such a manner that the thickness of each layer vertical to the substrate, and having a region produced by diffusing from the surface an impurity of reverse conductivity type to that of the substrate. CONSTITUTION:A stepwise difference is provided on the (100)-plane of an n type GaAs substrate 10 in parallel with the direction by means of photolithography and wet-etching with an H2SO4 series solution. At this time, the stepwise difference comes in a forward mesa shape in cross-section. Next, an n type Ga1-xAlxAs clad layer 11, a Ga1-yAlyAs active layer 12, a p type Ga1-xAlAs clad layer 13, and an n type GaAs current block layer 14 are formed by the MOCVD method. Thereafter, Zn is diffused in a maskless manner on the thin film layer at the uppermost part, i.e. on the surface 21 of the current block layer 14 in this case. |
| 公开日期 | 1985-12-20 |
| 申请日期 | 1984-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78237]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,KAZUMURA MASARU. Semiconductor laser device. JP1985258991A. 1985-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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