Semiconductor light emitting device
文献类型：专利
| 作者 | YANO MITSUHIRO; NISHI HIROSHI |
| 发表日期 | 1983-03-30 |
| 专利号 | JP1983053879A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve characteristic by forming the first light emitting layer of InGaAsP being clad by the first n and p type InP layer, stacking the n type second light emitting layer and p type InP layer in almost the same composition on the upper p type layer and by providing the P type stripe which reaches the first p type clad layer. CONSTITUTION:When the n-InP 2, InGaAsP first light emitting layer 13, P-InP 4, n-InGaAsP second light emitting layer 5, p-InP 6, p-InGaAsP or InP electrode connecting layer 7 are epiraxially formed on the n-InP substrate 1 and the striped layer 8 which reaches the layer 4 is formed by introducing Cd, the p-n junction between the layers 5 and 4 disappears and current is accommodated only within the layer 8. Thereafter, the Ti-Pt-Au 9 and Au-Ge-Ni 10 are evaporated, thud completing an element. According to this structure, a current blocking efficiency can be improved and the area of optical guide path 8 is substantially incrsases. Therefore, relation between an optical output and current becomes linear and efficiency can be enhanced. Moreover, the optical density at the edge port is reduced preventing breakdown of element. In addition, satisfactory collimate effect can be obtained and a threshold current does not depend on temperature. |
| 公开日期 | 1983-03-30 |
| 申请日期 | 1981-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78241]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO,NISHI HIROSHI. Semiconductor light emitting device. JP1983053879A. 1983-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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