Distributed feedback semiconductor laser
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296486A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To enable a single longitudinal and transverse mode operation by providing the first conductivity type semiconductor substrate, a waveguide layer, a current blocking layer and the second conductivity type clad layer. CONSTITUTION:A waveguide layer 13 made of n-type GaInAsP and an active layer 14 made of GaInAsP are laminated in sequence on a stripe like projection 12 and an InP substrate 10, a clad layer 15 made of p-type InP and a current blocking layer 16 made of ntype InP are laminated in sequence encircling the side of the stripe like projection 12 on the active layer 14 on the main surface of the InP substrate 10 and a cap layer 17 made of p-type GaInAsP is formed on the active layer 14 and the current blocking layer 16 on the stripe like projec tion 12 by interposing the clad layer 15. This enables a single longitudinal and transverse mode operation and easy manufacturing by a single liquid phase growth in a simple process. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78244]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Distributed feedback semiconductor laser. JP1987296486A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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