Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | TAKAHASHI YASUHITO; OGURA MOTOTSUGU |
| 发表日期 | 1989-06-13 |
| 专利号 | JP1989150378A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To eliminate almost all leak current and to prevent the insecure operation of a thyristor caused by spontaneous heat-radiating light at the time of oscillating or before oscillation by a method wherein an oxide film or a nitrogen film is used as a current blocking layer between the substrates of a semiconductor laser device and a buffer layer. CONSTITUTION:A flat-bottomed groove 11 is formed on a GaAs substrate 10, and an SiO2 film 20 is formed at the prescribed position as an oxide film. A buffer layer 12 is grown in lateral direction using said film 20 as a nitrogen film of Si3N4 and the like, and also using the exposed part of the side wall of the groove 11, on which the film 20 is formed, and the film 20. About 2mum of the part in the vicinity of the buffer layer 12 of the film 20 formed in the center part of said groove 11 is removed, and the remaining part of the buffer layer is formed. The first clad layer 13, an active layer 14, the second clad layer 15 and a gap layer 16 are successively grown on the buffer layer 12. Then, an SiO2 film 17, having a stripe hole of the prescribed width, is formed on the layer 16, and the region of this stripe hole is used as an active region. |
| 公开日期 | 1989-06-13 |
| 申请日期 | 1987-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78246]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKAHASHI YASUHITO,OGURA MOTOTSUGU. Semiconductor laser device and manufacture thereof. JP1989150378A. 1989-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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