Manufacture of semiconductor laser device
文献类型：专利
| 作者 | UNO TOMOAKI; SERIZAWA AKIMOTO |
| 发表日期 | 1989-05-12 |
| 专利号 | JP1989120086A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device whose manufacturing process is simplified, whose yield of an element is enhanced, whose coupling coefficient between a beam and a diffraction grating is large and which is oscillated satisfactorily in single longitudinal mode by a method wherein a semiconductor laser device having the diffraction grating is formed by two crystal growth processes using a vapor crystal growth method. CONSTITUTION:A first semiconductor layer 2 of a first conductivity type, a second semiconductor layer 3 of the first conductivity type to be used as a laser active layer and a third semiconductor layer 4 of a second conductivity type to be used as a laser waveguide layer are epitaxially grown one after another on a compound semiconductor substrate 1 of the first conductivity type. Then, the surface of the layer 4 is etched selectively in order to form a diffraction grating 5; the layers 2-4 are etched selectively down to at least the layer 2 in a direction perpendicular to grooves of the diffraction grating 5 in order to form a stripe-shaped laser resonator structure 6. Then, a fourth semiconductor layer 7 of the second conductivity type and a fifth semiconductor layer 8 of the first conductivity type are epitaxially grown by a vapor crystal growth method. After that, a first impurity to be used as the second conductivity type is diffused 9 onto an upper part of the laser resonator structure 6 from the surface of the layer 8 down to at least the layer 7. |
| 公开日期 | 1989-05-12 |
| 申请日期 | 1987-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78256]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | UNO TOMOAKI,SERIZAWA AKIMOTO. Manufacture of semiconductor laser device. JP1989120086A. 1989-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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