Semiconductor device
文献类型：专利
| 作者 | IRIKAWA MASANORI; KASHIWA TORU |
| 发表日期 | 1988-07-21 |
| 专利号 | JP1988177487A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To realize a multifunctional semiconductor device which possesses both the characteristic of GaAs and that of InP by a method wherein a GaAs crystal and an InP crystal are formed on an identical substrate by using a ternary mixed crystal GaxIn1-xP as a connecting layer so that an InP epitaxial layer can be grown on a GaAs substrate. CONSTITUTION:A GaAs crystal and an InP crystal are formed on an identical substrate by using a ternary crystal GaxIn1-xP (where x = 0.51-0) as a connecting layer (a buffer layer). For example, a GaxIn(1-x)P layer 2 as a buffer layer is grown on a GaAs substrate At the place which comes into contact with the GaAs substrate 1, the lattice constant is set at 5.653 Angstrom by setting x =0.51 and is made to coincide with the lattice constant of GaAs. Furthermore, x is changed gradually and continuously from 0.51 to 0 within the range where no crystal defect is caused; as soon as x = 0, an InP layer is grown. |
| 公开日期 | 1988-07-21 |
| 申请日期 | 1987-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78262]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IRIKAWA MASANORI,KASHIWA TORU. Semiconductor device. JP1988177487A. 1988-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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