Wavelength conversion element
文献类型：专利
| 作者 | KASAHARA KENICHI |
| 发表日期 | 1986-07-08 |
| 专利号 | JP1986150285A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wavelength conversion element |
| 英文摘要 | PURPOSE:To obtain the titled element small-sized having photo gains suitable for arraying, by providing the laminated structure consisting of a surface light emitting element and a photo transistor, and further constructing the whole so that the energy forbidden band width of the active region of the light emitting element and that of the base of the photo transistor are may be different from each other. CONSTITUTION:On photo irradiation to the photo transistor side, current flows to the series-connected light emitting element, leading to light emission. The wavelengths of incident light and emitted light can be varied by making the forbidden band wavelength of the photo transistor base different from that of the active layer of the light emitting element. The photo transistor and the light emitting element are made integral in the layer thickness direction and formed in proxity; therefore, the emitted light is partly absorbed to the base region of the photo transistor, and a positive feedback is effectively applied. As a result, the characteristic of differential gain generates between the incident light and the emitted light; use in this situation yields high photo gain. This process gives the titled element, compact, easy of production, having photo gains suitable for integration. |
| 公开日期 | 1986-07-08 |
| 申请日期 | 1984-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78263]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI. Wavelength conversion element. JP1986150285A. 1986-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。