Semiconductor device
文献类型：专利
| 作者 | INOUE KAORU |
| 发表日期 | 1984-12-14 |
| 专利号 | JP1984222964A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To reduce the occupying area of an element, in which an element such as a semiconductor laser and an electrical element are formed in the same region in a plane shape, by using structure, in which a vertical type FET and the laser are stacked, as the structure of an integrated type element consisting of the laser and the FET. CONSTITUTION:A semiconductor substrate 10 constitutes a semiconductor laser of buried type double hetero-structure, and a semiconductor layer 17 of the same conduction type as a layer 16 is formed on the semi-conductor substrate 10 through an epitaxial growth method. Either of InP, InGaAs or InGaAsP may be used as a material for the semiconductor layer 17. A gate region 18 is formed in a region on the striped region 16 in the semiconductor layer 17. The region 18 functions as a gate section n layer for a JFET. A p layer 19 is shaped through the diffusion of zinc, etc., and serves as a source region for the JFET. The striped region 16 constitutes a drain region for the JFET. The width of a depletion layer 20 is changed by applying plus voltage to a gate electrode 21a and varying the voltage, and the currents of a laser element are controlled. |
| 公开日期 | 1984-12-14 |
| 申请日期 | 1983-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78275]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | INOUE KAORU. Semiconductor device. JP1984222964A. 1984-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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