Manufacture of semiconductor laser
文献类型：专利
| 作者 | TAKAMORI TAKESHI; NAKAJIMA HISAO; FUKUNAGA TOSHIAKI; MATSUI KAZUNORI; ISHIDA KOJI |
| 发表日期 | 1987-04-02 |
| 专利号 | JP1987072190A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a semiconductor laser of a buried structure simply and with high accuracy by a method wherein, after converged ion beam of an impurity is applied to the predetermiend positions of an active layer or a optical waveguide layer, a high temperature heat treatment is performed for several hours. CONSTITUTION:An N-type Ga1-xAlx layer 2 of about 3mum thickness is made to grow on an N-type GaAs substrate crystal 1 by epitaxial growth. Then an undoped GaAs-Ga1-xAlxAs quantum well active layer 3 is made to grow. A P-type Ga1-xAlxAs layer 4 of about 0.2mum thickness,which is an optical waveguide layer, and an N-type GaAs-Ga1-xAlxAs quantum well layer 5 are made to grow on the active layer 3. Growth is discontinued at this state and Be ions are implanted into the stripe patterns in the center part of the multilayer quantum well 5 on the optical waveguide layer. Then a P-type Ga1-xAlxAs layer 6 of about 1mum thickness is made to grow on the quantum well layer 5 and further a P-type GaAs layer 7 of about 1mum thickness is made to grow on the layer 6. The crystal layers formed as described above are subjected to a heat treatment in an atmosphere of pressurized As at 675 deg.C for four hours by a closed tube method. |
| 公开日期 | 1987-04-02 |
| 申请日期 | 1985-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78290]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | TAKAMORI TAKESHI,NAKAJIMA HISAO,FUKUNAGA TOSHIAKI,et al. Manufacture of semiconductor laser. JP1987072190A. 1987-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。