Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | KOUNO TOSHIHIRO; OOTOSHI SOU; KAYANE NAOKI; KAJIMURA TAKASHI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-07-27 |
| 专利号 | JP1984130492A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To contrive the stabilization of high output and transverse mode by a method wherein the first and fourth semiconductor layers are set smaller than the second and third semiconductor layers in refractive indices, and the refractive index of the third semiconductor layer is set larger than that of the second semiconductor layer, and the first and forth semiconducltors are so provided as to have conductivity types reverse to those of each, then, the forbidden band widths of the second and forth semiconductor layers are so set as to be larger than that of the third semiconductor layer at the same time. CONSTITUTION:A mesa stripe 12 is formed. At this time, mesa depth is made to reach a GaAs substrate in order to facilitate a burial growth thereafter. An active layer 4 exposed to the side surface of the stripe by selective etching is removed with H3PO4 series etchant, thus forming a cross-sectional structure. Next, the mesa stripe is filled with a P-Ga0.55Al0.45As layer 7 and an N-Ga0.55Al0.45As layer 8 by liquid epitaxial growth, and the selective diffusion 9 or entire surface diffusion of Zn is performed, afterwards ohmic electrodes 10 and 11 are formed. |
| 公开日期 | 1984-07-27 |
| 申请日期 | 1983-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78295]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOUNO TOSHIHIRO,OOTOSHI SOU,KAYANE NAOKI,et al. Semiconductor laser device and manufacture thereof. JP1984130492A. 1984-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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