Semiconductor laser device
文献类型：专利
| 作者 | NAITO HIROKI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989218087A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase the output power of a semiconductor laser drastically in a single transverse mode, by forming the opposite conductivity type semiconductor layer on a one conductivity type semiconductor substrate having a protrusion, and forming a groove which has a depth reaching the protrusion directly above the protrusion. CONSTITUTION:A mesa is formed on p-type GaAs substrate 1 and an n-type GaAs layer 2 grows with a liquid phase epitaxial growth process so that the mesa is filled completely with the above growth. Then, a groove 9 which acts as a current channel is formed on the mesa by etching and a ridge 13 is formed at the outside of the groove 9. The groove is formed in such a way that the inside is narrow but it becomes wider gradually at the nearby end parts. Again, the liquid phase epitaxial growth process allows a p-type GaAlAs layer 3, a GaAlAs layer 4, an n-type GaAlAs layer 5, and an n-type GaAs layer 6 to grow on the groove. Finally, an AuGeNi electrode 7 and an AuZn electrode 8 are vaporized at n and p sides respectively. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAITO HIROKI,KUME MASAHIRO,SHIMIZU YUICHI. Semiconductor laser device. JP1989218087A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。