半導体レ-ザ装置及びその製造方法
文献类型：专利
| 作者 | 大場 康夫; 山本 基幸; 管原 秀人; 石川 正行; 渡辺 幸雄 |
| 发表日期 | 1996-02-14 |
| 专利号 | JP1996015228B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置及びその製造方法 |
| 英文摘要 | PURPOSE:To enable a current constricting structure to be formed in self-alignment with an optical waveguide structure and to prevent the increase in contact resistance between a contact layer and an electrode and the deformation of the electrode, by providing a contact layer having a second type of conductivity on a clad layer having the second type of conductivity and a current blocking layer. CONSTITUTION:A semiconductor laser device according to the present invention comprises a semiconductor substrate 11 having a first type of conductivity, a clad layer 14 having the first type of conductivity, an active layer 15 and clad layers 16-18 having a second type of conductivity and having a linear projection 18 thereon. A double hetero junction structure is thus formed on the semiconductor substrate 1 The semiconductor laser device further comprises a current blocking layer 21 formed on this double hetero junction structure except at least a part of the projection 18 of the clad layers having the second type of conductivity, and contact layers 20 and 22 having the second type of conductivity and formed on the second-conductivity-type clad layers 16-18 and the current blocking layer 2 For example, the semiconductor substrate 11 and the contact layers 20 and 22 may be formed of GaAs and the double hetero junction structure 14-18 may be formed of InGaAlP. Further, an InGaP buffer layer 13 of the first type of conductivity is provided between the GaAs substrate 11 and the InGaAlP clad layer 14 having the first type of conductivity. |
| 公开日期 | 1996-02-14 |
| 申请日期 | 1986-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78306]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 大場 康夫,山本 基幸,管原 秀人,等. 半導体レ-ザ装置及びその製造方法. JP1996015228B2. 1996-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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