Semiconductor laser
文献类型：专利
| 作者 | ITO TATSUYA; KATSUTA HIROHIKO; SUZAKI SHINZO; SUEMATSU YASUHARU |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169093A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To flatten an active waveguide layer without thickening a buffer layer by preparing a current block layers where a hole is formed according to a position of an active region consisting of a plurality of semiconductor layers. CONSTITUTION:An n-InP current block layer 20 performs an epitaxial growth on an upper plane and after that only a part corresponding to an active of the current block layer 20 is etched and the surface of the substrate 1 is exposed by opening a hole 20a that is in the form of narrow rectangle. Then a buffer layer 11 performs the epitaxial growth at the current block layer 20 and at an exposed plane of the substrate The hole 20a is buried even though its layer thickness is thin and with the leveled surface of the buffer layer 11, its configuration not only reduces a leakage current but also achieves a distributed reflection semiconductor laser having a high efficiency. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78308]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | ITO TATSUYA,KATSUTA HIROHIKO,SUZAKI SHINZO,et al. Semiconductor laser. JP1988169093A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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