Semiconductor laser
文献类型：专利
| 作者 | NITTA KOICHI; HATAGOSHI GENICHI; NISHIKAWA YUKIE; SUZUKI MARIKO |
| 发表日期 | 1992-05-07 |
| 专利号 | JP1992133381A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize an oscillation wavelength by forming a region in which a band gap energy of an active layer of a double hetero structure is larger than the other part by disordering atoms of the active layer in a part of a laser resonator. CONSTITUTION:An oblique part 11 of a plane (111) is, for example, provided on the center of the upper surface of an n-type GaAs substrate 10 of a planar orientation (100). A double hetero structure in which an n-type In0.5(Ga0.3Al0.7)0.5P clad layer 12, an InGaP active layer 13 and a p-type In0.5(Ga0.3Al0.7)0.5P clad layer 14 are sequentially laminated, is formed on the substrate 10, and a stripelike mesa 15 is formed on the layer 14. An n-type GaAs current blocking layer 16 is formed on the side of the mesa 15, and a p-type GaAs ohmic contact layer 17 is formed on the mesa 15 and the layer 16. A p-type side electrode 18 is formed on the layer 17, and an n-type side electrode 19 is formed on the lower surface of the substrate 10. A crystal 20 grown on the surface 11 increases in its band gap energy. |
| 公开日期 | 1992-05-07 |
| 申请日期 | 1990-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78323]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NITTA KOICHI,HATAGOSHI GENICHI,NISHIKAWA YUKIE,et al. Semiconductor laser. JP1992133381A. 1992-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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