Semiconductor laser device
文献类型：专利
| 作者 | HORI KENICHI |
| 发表日期 | 1983-06-03 |
| 专利号 | JP1983093390A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the leak light by a method wherein, in a stripe type semiconductor laser of double hetero junction construction, the light absorbing layers are laminated on at least one side of luminescent region. CONSTITUTION:A semiconductor laser comprises N type InP 8, N type InP buffer layer 9, N type InGaP absorbing layer 10, N type InP clad layer 11, InGaP active layer 12, P type InP clad layer 13, P type InGaAsP absorbing layer 14, SiO2 insulating layer 15, P side electrode 16, N type electrode 17. The absorbing layer 10, 14 make oscillation stable since they are arranged to hold from above and below the semiconductor layer which comprises the clad layer 11, 13 holding the active layer 12 further from above and below absorbing the leak light propagated in the directions of electrodes 16, 17 reducing the intensity of light returned to the active layer 12 reflected by said electrodes 16, 17. |
| 公开日期 | 1983-06-03 |
| 申请日期 | 1981-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78325]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HORI KENICHI. Semiconductor laser device. JP1983093390A. 1983-06-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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