Semiconductor laser
文献类型：专利
| 作者 | YAMAMOTO MOTOYUKI; MUTOU YUUHEI |
| 发表日期 | 1985-07-19 |
| 专利号 | JP1985136286A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the element resistance, and to block Zn diffusion to an N- GaAs current block layer and a P-GaAlAs clad layer by a method wherein an active layer agent in a medium type coat layer is made of a P layer, and the upper side thereof is made of a P layer; besides, the P and P layers are composed of the same composition crystal. CONSTITUTION:An N-Ga0.55Al0.45As clad layer 12, an undoped Ga0.9Al0.1As active layer 13, a P-Ga0.55Al0.45As clad layer 14, and an N-GaAs current block layer 15 are successively formed by growth on an N-GaAs substrate 11 having the surface orientation (100). Next, a photoresist 49 is applied on the layer 15, and a stripe window is formed in the resist 49; then, a stripe groove 40 is formed by selectively etching the layer 15 with the resist as a mask. Then, the resist 49 is removed, and surface-washing treatment is carried out; thereafter, the second crystal growth is performed. In other words, a P-GaAs coat layer 36a and a P-GaAs coat layer 36b are successively formed by growth over the entire surface. Thereafter, the layer 26b is coated with an Au-Cr electrode layer 18 by a normal electrode mounting process, and the bottom of the substrate is coated with an Au-Ge electrode 17. |
| 公开日期 | 1985-07-19 |
| 申请日期 | 1983-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78330]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO MOTOYUKI,MUTOU YUUHEI. Semiconductor laser. JP1985136286A. 1985-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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