Manufacture of semiconductor device
文献类型：专利
| 作者 | MARUYAMA KENJI; UEDA TOMOSHI |
| 发表日期 | 1987-07-31 |
| 专利号 | JP1987174928A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To reduce the number of manufacturing processes and to remove the possibility of contamination on the formed layer by not exposing it to the outside air by a method wherein, after an HgCdTe layer has been formed by performing a liquid-phase epitaxial growing method using Te as a solvent and HgCdTe containing N-type impurities as a solute, the HgCdTe layer is maintained for a while in the state as it is in the above-mentioned atmosphere, and the formation of layers is conducted in a liquid-phase growing device only. CONSTITUTION:An HgCdTe layer 2 of about 20mum in thickness is formed on a CdTe substrate 1 of about 700mum in thickness by performing a liquid-phase growing method using Hg and Cd, with which Hg0.3Cd0.7Te containing In or N-type impurities of about 10-10cm is deposited, as a solute and also using Te as a solvent. Said HgCdTe layer 2 formed by performing the above- mentioned process is turned to the P-type of about 5X10cm when growing temperature is 510 deg.C. This conductive type is revealed by the empty hole of Hg. |
| 公开日期 | 1987-07-31 |
| 申请日期 | 1985-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78332]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MARUYAMA KENJI,UEDA TOMOSHI. Manufacture of semiconductor device. JP1987174928A. 1987-07-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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