Manufacture of semiconductor laser device
文献类型：专利
| 作者 | WATANABE YUKIO; ISHIKAWA MASAYUKI; OBA YASUO; YAMAMOTO MOTOYUKI |
| 发表日期 | 1988-07-22 |
| 专利号 | JP1988178574A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a good regrown crystal while obtaining desired stripe width and thickness by using thermal sulfuric acid for forming a salient part of a clad layer. CONSTITUTION:After growing an n-GaAs buffer layer 2, an n-InGaP buffer layer 3, an n-InGaAlP clad layer, an InGaP active layer 5 and the first p- InGaAlP clad layer 13 on an n-GaAs semiconductor substrate 1, a p-InGaP layer 14, the second p-InGaAlP clad layer 15 and a p-GaAs ohmic contact layer 7 are formed. Then, a striped mesa is formed by etching a layer 7 with a mask of SiO2 8. Further, etching is performed down to the p-InGaP layer 14 by using thermal sulfuric acid so as to form the striped mesa having desired width and thickness. Next, n-GaAs 10 can be excellently buried with SiO28 as the mask to finish it by forming electrodes 11 and 12. |
| 公开日期 | 1988-07-22 |
| 申请日期 | 1987-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78344]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | WATANABE YUKIO,ISHIKAWA MASAYUKI,OBA YASUO,et al. Manufacture of semiconductor laser device. JP1988178574A. 1988-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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