Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAJIMURA TAKASHI; HIRASHIMA KENJI; UEJIMA KENICHI |
| 发表日期 | 1989-06-01 |
| 专利号 | JP1989140787A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having suitably wrong coherency, narrow horizontal beam spreading angle and low noise by increasing the width of a stripelike protrusion shape wide near a reflecting face of the side for irradiating an optical beam, and smoothing its variation, thereby operating its pulsation. CONSTITUTION:The center of a laser has a width W1 of a photoconductor, this region is formed in a structure for effectively generating a pulsation, the vicinity of at least one reflecting face is widened to W2>W1, and a beam spreading angle is corrected in this region. The transfer from the width W1 to the W2 is smoothly performed. The beam spreading angle can be arbitrarily set by altering the width W2 of an optical guide near the reflecting face, i.e., the width of the stripelike protrusion shape provided at a semiconductor clad layer. Thus, the pulsation effectively occurs, thereby obtaining a semiconductor laser element having suitably wrong coherency, a narrow beam spreading angle adapted to be coupled with an optical system, low threshold current value and low noise in a low yield. |
| 公开日期 | 1989-06-01 |
| 申请日期 | 1987-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78353]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAJIMURA TAKASHI,HIRASHIMA KENJI,et al. Semiconductor laser element. JP1989140787A. 1989-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。