Semiconductor laser device
文献类型：专利
| 作者 | HAMADA TAKESHI; WADA MASARU; ITOU KUNIO; SHIMIZU YUUICHI; KUME MASAHIRO |
| 发表日期 | 1985-12-19 |
| 专利号 | JP1985257583A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce optical absorption in the vicinity of the end surfaces of ridges, and to realize a high output by forming each layer containing an active layer onto a substrate to which two parallel ridges, width thereof is narrowed only in sections in the vicinity of the end surfaces, are formed. CONSTITUTION:The width of ridges 1a, 1b is formed in 5mum within 10mum from end surfaces and in 20mum in sections except the end surfaces. The height of the ridges 1a, 1b is shaped in 5mum, and the width of a groove between the ridges 1a, 1b is formed in 4mum. A first layer N type clad layer 2 is grown in 0.2mum in a flat section at the center, a second layer non-doped active layer 3 in approximately 0.05mum at the same position, a third layer P type clad layer 4 in approximately 5mum at the same position and a fourth layer N type cap layer 5 in thickness of approximately 0.5mum continuously on the substrate 1 through a liquid phase epitaxial method. Consequently, the film thickness dB of the active layer in the vicinity of the end surfaces of a laser chip is made thinner than that dA in the vicinity of the center, and the forbidden band width of the active layer is increased only near the end surfaces. Accordingly, since laser beams generated in the inside do not receive absorption near the end surfaces, the laser chip is difficult to be broken in the end surfaces, and extremely large optical outputs can be obtained. |
| 公开日期 | 1985-12-19 |
| 申请日期 | 1984-06-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78358]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | HAMADA TAKESHI,WADA MASARU,ITOU KUNIO,et al. Semiconductor laser device. JP1985257583A. 1985-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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