Manufacture of semiconductor device
文献类型：专利
| 作者 | SAWA KAZUHIRO; MATSUDA TOSHIO; FURUIKE SUSUMU |
| 发表日期 | 1987-08-14 |
| 专利号 | JP1987186583A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To reduce a surface leak current, by etching the surface of a p-n junction composed of an InP epitaxial layer and an InGaAsP epitaxial layer with a solution containing sulfuric acid. CONSTITUTION:On an n-type InP substrate 1, the following layers are formed in order by a liquid phase epitaxial growth method; an n-type InP layer 2, a p-type In1-xGaxAs1-yPy layer 3, a p-type InP layer 4 and a p-type In1-xGaxAs1-yPy layer 5. After electrodes 10 and 11 are formed, a p-n junction 9 is separated by etching using bromine.methanol solution. Succesively, the exposed part of the junction 9 is subjected to etching using a liquid containing sulfuric acid. Thereby, a surface lead current caused by the etching waste matter of bromine.methanol solution can be reduced. |
| 公开日期 | 1987-08-14 |
| 申请日期 | 1986-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78362]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SAWA KAZUHIRO,MATSUDA TOSHIO,FURUIKE SUSUMU. Manufacture of semiconductor device. JP1987186583A. 1987-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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