Semiconductor element
文献类型：专利
| 作者 | MATSUOKA TAKASHI; YOSHIMOTO NAOTO; KATSUI AKINORI |
| 发表日期 | 1992-07-30 |
| 专利号 | JP1992209584A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To obtain an element suitable for the optical electric integrated circuit having the double hetero structure capable of being constituted under the condition of grid conformity of a substrate by making it contain at least one semiconductor layer of specific material, in a semiconductor element, on the single crystal substrate of which an active layer is equipped. CONSTITUTION:An n-type InBP buffer layer 2, a nondoped InBAsP active layer 3 shown in the formula I, and a p-type InBP clad layer 4 are made on an n-type GaAs single crystal substrate 1, and also buried layers 5 are made with the active layer 3 between, and a p-type electrode metallic layer 6 and an n-type electrode layer 7 are provided above and below, and a current reaches the electrode layer 7, being injected from a gold plating layer 8. The current is narrowed down by the insulating layer 5, and flows to the layer 3 only. The band gap energy of the layers 2, 4, and 5 is larger than that of the layer 3, and the refractive index is smaller than it. Accordingly, the implanted carriers are shut in the layer 3, and the light generated in the layer 3 also is shut in the layer. Hereby, they becomes a semiconductor light emitting element and a light receiving element suitable for the optical electric integrated circuit having the double hetero structure capable of constituted by the condition of grid conformity of a substrate. |
| 公开日期 | 1992-07-30 |
| 申请日期 | 1990-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78364]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | MATSUOKA TAKASHI,YOSHIMOTO NAOTO,KATSUI AKINORI. Semiconductor element. JP1992209584A. 1992-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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