Manufacture of semiconductor device
文献类型：专利
| 作者 | UEDA OSAMU; TANAHASHI TOSHIYUKI |
| 发表日期 | 1984-03-13 |
| 专利号 | JP1984044817A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prevent a cavity formed on a substrate from being deformed by thermal treatment for an epitaxial growth by a method wherein the cavity is formed on the substrate by chemical etching and a surface layer is removed by dry etching and then semiconducltor layers are formed on the substrate by an epitaxial growth. CONSTITUTION:On an n type InP substrate an n type InP buffer layer 2 and a p type InP current blocking layer 3 are formed by an epitaxial growth and SiO2 film 4 is formed. Then an aperture of stripe-form is formed on the film 4. A V-groove 6 is formed by chemical etching. Then the film 4 is removed selectively by HF and products of the chemical etchin gare removed by dry etching. After that an n type InP cladding layer 7, a non-doped InGaAsP activated layer 8, a p type InP cladding layer 9 and a p type InGaAsP contact layer 10 are successively formed in the V-groove 6 by a liquid phase epitaxial growth. |
| 公开日期 | 1984-03-13 |
| 申请日期 | 1982-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78372]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU,TANAHASHI TOSHIYUKI. Manufacture of semiconductor device. JP1984044817A. 1984-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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