Semiconductor laser device
文献类型：专利
| 作者 | MARUNO SHIGEMITSU; SUGIMOTO HIROSHI; NOMURA YOSHITOKU; OGATA HITOSHI |
| 发表日期 | 1989-11-20 |
| 专利号 | JP1989287982A |
| 著作权人 | 光技術研究開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To modulate under a low current injecting condition at a high speed by shifting the bottom of the conduction band of a collector layer to an energy position equal to or smaller than n=1 quantum level, and discharging electrons by tunneling from a base layer to the collector layer. CONSTITUTION:An optical waveguide is formed of an emitter layer 2 having a conduction band disposed at its bottom at an energy position for supplying electrons by tunneling to a quantum level of n=2 or more of electrons, and a collector layer 6 having a band gap larger than that of a quantum well and a conduction band disposed at its bottom at an energy position larger than n=1 of quantum level of the electrons as clad layers. A bias voltage is applied between the layers 5 and 6 to shift the bottom of the conduction band of the layer 6 to an energy position having equal to or smaller than n=1 quantum level, thereby discharging the electrons by tunneling from the layer 5 to the layer 6. Thus, a high modulation speed is obtained under low current injecting condition. |
| 公开日期 | 1989-11-20 |
| 申请日期 | 1988-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78378]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光技術研究開発株式会社 |
| 推荐引用方式 GB/T 7714 | MARUNO SHIGEMITSU,SUGIMOTO HIROSHI,NOMURA YOSHITOKU,et al. Semiconductor laser device. JP1989287982A. 1989-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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