Light emitting element
文献类型：专利
| 作者 | HACHIMAN AKIHIRO; KOMATSUBARA TADASHI |
| 发表日期 | 1984-12-03 |
| 专利号 | JP1984213181A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting element |
| 英文摘要 | PURPOSE:To obtain the titled element of a high luminous efficiency and high speed response excellent in mass productivity and suitable as the light source for optical communication by a method wherein the hole concentration of a P type GaAlAs active layer doped with Ge is set within a specific range. CONSTITUTION:A P type GaAlAs cld layer 2, a P type GaAlAs active layer 3 doped with Ge, and an N type GaAlAs clad layer 4 are formed by successive lamination on a P type GaAs substrate The first electrode 5 is formed on the lower surface of said substrate 1, and the second electrode 6 on the upper surface of said clad layer 4. In such a construction, the control of the hole concentration of said active layer 3 at 1X10cm-5X10cm causes the response at 20MHz or more and light emitting output at 2mW or more. The hole concentration of said layer 3 is in accordance with the doping amount of Ge doped to this layer 3, and the hole concentration can be easily controlled based on the condition for Ge doping. |
| 公开日期 | 1984-12-03 |
| 申请日期 | 1983-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78388]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | HACHIMAN AKIHIRO,KOMATSUBARA TADASHI. Light emitting element. JP1984213181A. 1984-12-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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