Semiconductor light emitting element
文献类型：专利
| 作者 | OKAZAKI HARUHIKO |
| 发表日期 | 1987-10-19 |
| 专利号 | JP1987238672A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To form a semiconductor light emitting element comprising an InGaAsP-InP based semiconductor characterized by high reliability, a high yield rate and high light emitting efficiency, by sequentially forming a clad layer, an InGaAsP layer having a energy gap larger than that of an active layer and an InGaAs layer having a energy gap smaller than that of the active layer in contact with the active layer, and forming an electrode on the InGaAs layer having the energy gap smaller than that of the active layer. CONSTITUTION:This element comprises an InGaAsP-InP based semiconductor and has a double-heterojunction structure. In contact with a P-type clad layer 4, a P-type InGaAsP layer 5 having a energy gap larger than that of an active layer is provided. In contact with said P-type InGaAsP layer 5, a P-type InGaAs layer 6 having a energy gap smaller than that of the active layer is formed, and the layer 6 is used as an ohmic contact layer. The ohmic contact layer 6 is made to be a semiconductor layer having a small energy gap, e.g., an In0.47Ga0.53As layer (Eg=0.75eV). Thus the ohmic contact resistance can be made small. The InGaAsP layer having the energy gap larger than that of the wavelength of the emitted light is provided in contact with the semiconductor layer 6 having the small energy gap on the side of the active layer. Thus the chemical reaction of alloying among an electrode on the P side, the clad layer 4 and the active layer 3 is suppressed, and reliability is improved to a large extent. |
| 公开日期 | 1987-10-19 |
| 申请日期 | 1986-04-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78390]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | OKAZAKI HARUHIKO. Semiconductor light emitting element. JP1987238672A. 1987-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。